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| SMD Type MOSFET IC N-Channel Enhancement Mode Field Effect Transistor KI2300(SI2300) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 VDS=20V,RDS(ON)=40m VDS=20V,RDS(ON)=60m VDS=20V,,RDS(ON)=75m @VGS=4.5V,ID=5.0A +0.1 2.4-0.1 @VGS=2.5V,ID=4.0A @VGS=1.8V,ID=1.0A +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate 2.Emitter 2. Source +0.1 0.38-0.1 0-0.1 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous * TJ=125 -Pulsed Power Dissipation * Thermal Resistance,Junction- to-Ambient Operating Junction and Storage Temperature Range * Surface Mounted on FR 4 Board ,t 10 sec. Symbol VDS VGS ID IDM PD RthJA Tj.Tstg Rating 20 10 3.8 15 1.25 100 -55 to 150 Unit V V A A W /W www.kexin.com.cn 1 SMD Type KI2300(SI2300) Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage * Symbol VDSS IDSS IGSS VGS(th) Testconditons VGS=0V,ID=250uA VDS=20V,VGS=0V VGS= 10V,VDS=0V 0.6 Min 20 MOSFET IC Typ Max Unit V 1 100 0.78 32 50 62 18 5 888 1.5 40 60 75 uA nA V m m m A S pF pF pF ns ns ns ns nC nC nC VGS=VDS,ID=250uA VGS=4.5V,ID=5.0A Drain- Source on-state Resistance * RDS(ON) VGS=2.5V,ID=4.0A VGS=1.8V,ID=1.0A On-State Drain Current * Forward Transconductance * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge Drain-Source Diode Forward Current * Diode Forward Voltage * Pulse Test:Pulse Width 300 ,Duty Cycle 2% ID(ON) gFS CISS COSS CRSS tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD VDS=5V,VGS=4.5V VDS=5V,ID=5A VDS = 15V, VGS = 0V,f =1.0MHZ 144 115 31.8 VDD=10V,ID=1A,VGS=4.5V,RL=10 ,RGEN=6 14.5 50.3 31.9 16.8 VDS = 10V, ID = 3.5A,VGS = 4.5V 2.5 5.4 1.25 A V VGS=0V,IS=1.25A 0.825 1.2 2 www.kexin.com.cn |
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